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WTC2310
N-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT 3 AMPERS DRAIN SOUCE VOLTAGE 60 VOLTAGE
Features:
*Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90m@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOURCE
2
3 1 2
SOT-23
( Maximum Ratings(TA=25 Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@10V(TA ,VGS@10V(TA Pulsed Drain Current1,2 Total Power Dissipation(TA=25 ) Maximum Junction-ambient3
Unless Otherwise Specified) Symbol
VDS VGS ID IDM PD R
JA
Value
60
Unit
V
20 3.0 2.3 10 1.38 90 -55~+150 W /W A
Operating Junction and Storage Temperature Range
TJ, Tstg
Device Marking
WT 2310=2310
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Electrical Characteristics (TA = 25
Characteristic Unless otherwise noted) Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS=0,ID=250A Gate-Source Threshold Voltage VDS=VGS,ID=250A Gate-Source Leakage Current VGS= 20V Drain-Source Leakage Current(Tj=25) VDS=60V,VGS=0 Drain-Source Leakage Current(Tj=70) VDS=48V,VGS=0 Drain-Source On-Resistance VGS=10V,ID=3A VGS=4.5V,ID=2A Forward Transconductance VDS=5V,ID=3 A gfs RDS(on) 5.0 90 120 m IDSS 25 V(BR)DSS VGS(Th) IGSS 60 1.0 V 3.0 nA
100 10
A
S
Dynamic
Input Capacitance VGS=0V,VDS=25V,f=1.0MHz Output Capacitance VGS=0V,VDS=25V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=25V,f=1.0MHz Ciss Coss Crss 490 55 40 780 pF
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Switching
Turn-on Delay Time2 VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Rise Time VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Turn-off Delay Time VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Fall Time VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Total Gate Charge2 VDS=48V,VGS=4.5V,ID=3A Gate-Source Charge VDS=48V,VGS=4.5V,ID=3A Gate-Drain Change VDS=48V,VGS=4.5V,ID=3A td(on) 6 5 16 3 6 1.6 3 ns td (off) 10 nC
tr
tf
Qg Qgs Qgd
Source-Drain Diode Characteristics
Forward On Voltage2
VGS=0V,IS=1.2A
VSD
-
25 26
1.2 -
V ns nC
Reverse Recovery Time VGS=0V,IS=3A, dl/dt=100A/s Reverse Recovery Charge VGS=0V,IS=3.9A,dl/dt=100A/s
Trr Qrr
Note: 1. Pulse width limited by max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad.
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10 10 8
TA=25C
10V 7.0V
TA=150C
10V 7.0V 5.0V 4.5V
8
ID ,DRAIN CURRENT (A)
4.5V
ID ,Drain Current (A)
5.0V
6
VG=3.0V
6
VG=3.0V
4
4
2
2
0
0
0 1 2 3 4 5
0
1
2
3
4
5
FIG.1 Typical Output Characteristics
105 99 93 2.0
VDS ,DRAIN-TO-SOURCE VOLTAGE(V)
Fig.2 Typical Output Characteristics
VDS ,Drain-to-source Voltage(V)
ID = 2A TA = 25C Normalized RDs(on)
1.8 1.6 1.4 1.2 1.0 0.8 0.6
-50
ID = 3A VG = 10V
RDs(on) (m)
87 81 75
2
Fig.3 On-Resistance v.s. Gate Voltage
4 1.4 1.2
VGS ,Gate-to-source Voltage(V)
4
6
8
10
0
50
100
150
Fig.4 Normalized OnResistance
Tj ,Junction Temperature(C)
3
Normalized VGS(th)(V)
1.2
1.0
2
Tj = 150C
Tj = 25C
Is ( A )
0.8 0.6
1
0
0
0.2
Fig.5 Forward Characteristics of Reverse Diode
VDS ,Source-to-Drain Voltage(V)
0.4
0.6
0.8
1
0.4
-50
Fig.6 Gate Threshold Voltage v.s. Junction Temperature
Tj ,Junction Temperature(C)
0
50
100
150
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14
1000
f = 1.0MHz
VGS , Gate to Source Voltage(V)
12 10 8 6 4 2 0
ID = 3A VDS = 30V VDS = 38V VDS = 48V C(pF)
100
Ciss
Coss Crss
0
3
6
9
12
15
0
1
5
9
13
17
21
25
29
Fig 7. Gate Charge Characteristics
100,000
QG , Total Gate Charge(nC)
VDS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5 0.2
10,00
100us
1,000
Normalized Thermal Response(R ja)
0.1
0.1 0.05
PDM
ID(A)
1ms
0.100
10ms 100ms
0.01
0.01
t T
0.010
TA = 25C Single Pulse
0.1 1 10
Is DC
Duty factor = t / T Peak Tj=PDM x R ju + Tu R ja=270C / W
Single pulse
0.001
0.001
VDS , Drain-to-Source Voltage(V)
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Pulse Width(s)
Fig 9. Maximum Safe Operation Area
VDS 90%
Fig 10. Effective Transient Thermal Impedance
VG QG QGS QGD
4.5V
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Circuit
Fig.12 Gate Charge Waveform
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SOT-23 Outline Dimension
SOT-23
A
TOP VIEW D E G H
B
C
K J L M
Dim A B C D E G H J K L M
Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076
Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25
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